Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells
نویسندگان
چکیده
An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of this and similar devices a suitable model for the ferroelectric effects has been developed. We describe this model and show the results of its implementation into a device simulator.
منابع مشابه
Two-Dimensional Simulation of Ferroelectric Memory Cells
An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of the resulting devices, a suitable model for the ferroelectric effects has been developed. We present this model and show the results of its implementation into a device simulator. Although this model w...
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